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[IR] SK hynix (000660 / SKHY) – Q2 2025 Earnings Presentation / 2025-07-24

Posted on July 24, 2025August 14, 2026 By K-STOCK Editor No Comments on [IR] SK hynix (000660 / SKHY) – Q2 2025 Earnings Presentation / 2025-07-24

Market: KOSPI (000660)

💡 3-Second Summary

SK hynix achieved record quarterly performance in Q2 2025 (Revenue of KRW 22.23T, Operating Profit of KRW 9.21T with 41% OPM) and is making preemptive investments including the M15X opening, while advancing HBM4 optimization and 321-layer NAND development to address expanding AI memory demand.

📊 1. [Key Guidance & Quantitative Roadmap Summary]

[Q3 2025 Shipment Guidance (Forecast)]

  • DRAM Bit Growth: Projected to increase by low-to-mid single-digit % QoQ
  • NAND Bit Growth: Planned for limited growth QoQ (including Solidigm)

[CapEx Outlook & Infrastructure Timeline (Guidance & Timeline)]

  • CapEx: Annual investments for 2025 are planned to increase compared to prior plans due to preemptive investments needed to support 2026 HBM customer demand
  • M15X Fab: Scheduled to open in Q4 2025 as planned and will be utilized for DRAM production, including HBM, starting in 2026
  • Yongin Fab 1: Construction completion scheduled for Q2 2027

[Q2 2025 Historical Performance Summary]

  • Revenue: KRW 22.23T (22,232 billion won) (+26% QoQ, +35% YoY)
  • Operating Profit: KRW 9.21T (9,213 billion won) (OPM 41%, +24% QoQ, +68% YoY)
  • EBITDA: KRW 12.65T (12,645 billion won) (EBITDA margin 57%, +17% QoQ, +47% YoY)
  • Net Profit: KRW 7.00T (6,996 billion won) (NPM 31%, reflecting KRW -613B FX-related loss)
  • Q2 Price & Shipment Metrics:
    • DRAM: Bit growth increased by mid-20% range QoQ / ASP increased by low single-digit % QoQ
    • NAND: Bit growth increased by over 70% QoQ / ASP decreased by high single-digit % QoQ
  • Balance Sheet Status (As of Q2 2025):
    • Cash: KRW 16.96T (Debt: KRW 21.84T)
    • Debt-to-Equity Ratio: 25% / Net Debt-to-Equity Ratio: 6%

🚀 2. [Business Strategies & Future Plans]

  • Market Demand Outlook:
    • Robust demand driven by upward revisions in Big Tech AI infrastructure spending.
    • General server replacement cycles and new CPU rollouts fueling high-performance memory demand.
    • Rising memory content per box in smartphones and PCs with on-device AI integration.
    • Expanding enterprise SSD adoption driven by power-efficiency requirements in high-density data centers.
  • DRAM Strategy & Roadmap:
    • HBM: Maintaining the full-year target of approximately doubling HBM revenue YoY in 2025. HBM4 samples provided in March 2025, with customer performance optimization underway.
    • High-Density Server & Mobile: Broadening sales of 8,000Mbps+ DDR5 and 128GB+ server modules. Sustaining supply of LPDDR5X for flagships and LPDDR4X for Chinese mobile customers.
    • New Form Factors: Initiating commercial supply of server LPDDR-based modules within the year and preparing GDDR7 up to 24Gb density.
  • NAND Strategy & Roadmap:
    • High-Capacity eSSD: Expanding sales of QLC-based 120TB+ ultra-high-density enterprise SSDs in Q2.
    • 321-Layer Development: Completed 321-layer NAND-based UFS 4.1 development in May 2025; targeting development of 321-layer cSSD and eSSD products within the year.
  • Manufacturing Infrastructure:
    • Securing 2026 HBM and DRAM capacity via M15X opening in Q4 2025, while progressing Yongin Fab 1 construction targeted for Q2 2027 completion.

📝 Editor’s Comment (by K-STOCK Editor)

Management expects sustained Big Tech investments, traditional server refresh cycles, and broader AI adoption to support demand growth across high-performance, high-capacity, and low-power memory and storage solutions. To align with these trends, the company is executing on its plan to double 2025 HBM revenue while making preemptive investments for future HBM demand, including the Q4 2025 M15X opening, alongside HBM4 performance optimization and development of its 321-layer NAND portfolio.

Key monitoring variables going forward include the on-schedule opening of M15X in Q4 2025 and its preparation for 2026 DRAM/HBM production, along with progress in HBM4 customer optimization and the completion of 321-layer cSSD/eSSD development within the year.

📢 Disclaimer and Source Notice

Source: This content is structured and generated based on official financial facts and IR presentation materials published by the company.

Investment Risk Warning: This briefing is provided for informational and language reference purposes only. Forward-looking guidance and estimates contained herein are company projections and do not guarantee future performance. Under no circumstances does this constitute financial advice or a recommendation to buy or sell securities. All investment decisions and financial liabilities rest entirely with the investor.

Contact: For regulatory compliance and copyright inquiries, please contact ksb220805@gmail.com.

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